EDO wants to understand processes and develop protocols for intentional electronic doping in soft semiconductors thin films, thanks to a multimodal experimental tool combining in situ electronic and chemical mapping at nanometer scale. Unlike established semiconductors, which are typically covalent solids, those belonging to the class of soft materials, such as molecules and polymers, forming van der Waals solids, and metal halide perovskites, forming ionic solids, host complex doping mechanisms. As a result, intentional electronic doping has not been demonstrated yet for metal halide perovskites and it is object of hot debate in organic semiconductors, limiting their application. Intrinsic challenges, such as compensation and migration of defects, charge localization, phase segregation and the strong doping−processing relationship, may hide or hamper the designed doping process. Characterization and control of such phenomena require the combination of electronic, chemical and morphological/structural information at once. As a result, reports are often incomplete and contradictory and advanced tools are in demand to draw a complete picture. Synchrotron facilities may help reaching the target, however, their limited access hampers a direct feedback between synthesis and characterization. EDO wants to develop a new experimental tool, in laboratory environment, to quantitatively assess the doping and examine its impact on the optoelectronic properties of soft semiconductors. A photoemission microscope is planned to be coupled to tunable coherent sources, covering Extreme UV and XUV radiation to map the Fermi level, the electronic structure and the elemental composition of thin films and transfer the secured knowledge to the development of materials processing